Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Number of Pins  

7

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

160A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

330W Tc

Turn Off Delay Time  

110 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2003

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

6

ECCN Code  

EAR99

Resistance  

1.6MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Voltage - Rated DC  

40V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Current Rating  

160A

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G6

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

330W

Case Connection  

DRAIN

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.6m Ω @ 160A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

6930pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

260nC @ 10V

Rise Time  

150ns

Vgs (Max)  

±20V

Fall Time (Typ)  

105 ns

Continuous Drain Current (ID)  

320A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

40V

Recovery Time  

65 ns

Nominal Vgs  

4 V

Height  

4.5466mm

Length  

10.5mm

Width  

8.15mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Contains Lead